[EAN: 9781493946990], Neubuch, [SC: 0.0], [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware - Printed after ordering - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters., Books<
[EAN: 9781493946990], Neubuch, [SC: 0.0], [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware -This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. 676 pp. Englisch, Books<
[EAN: 9781493946990], Neubuch, [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. 676 pp. Englisch, Books<
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details… Mehr…
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. Books > Science & Nature > Science > Technology > Superconductors List_Books<
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Paperback, [PU: Springer-Verlag New York Inc.], This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the func… Mehr…
Paperback, [PU: Springer-Verlag New York Inc.], This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices., Semi-conductors & Super-conductors<
[EAN: 9781493946990], Neubuch, [SC: 0.0], [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware - Printed after ordering - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters., Books<
[EAN: 9781493946990], Neubuch, [SC: 0.0], [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware -This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. 676 pp. Englisch, Books<
[EAN: 9781493946990], Neubuch, [PU: Springer New York], PHYSICSOFSEMICONDUCTORDEVICES; SEMICONDUCTORDEVICES; SEMICONDUCTORPHYSICS; SEMICONDUCTORTECHNOLOGY; SEMICONDUCTOR-DEVICEARCHITECTURES; SOLID-STATEPHYSICSANDSEMICONDUCTORDEVICES, Druck auf Anfrage Neuware - This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. 676 pp. Englisch, Books<
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details… Mehr…
This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices. Details are worked out carefully and derived from the basic physics, while keeping the internal coherence of the concepts and explaining various levels of approximation. Examples are based on silicon due to its industrial importance. Several chapters are included that provide the reader with the quantum-mechanical concepts necessary for understanding the transport properties of crystals. The behavior of crystals incorporating a position-dependent impurity distribution is described, and the different hierarchical transport models for semiconductor devices are derived (from the Boltzmann transport equation to the hydrodynamic and drift-diffusion models). The transport models are then applied to a detailed description of the main semiconductor-device architectures (bipolar, MOS). The final chapters are devoted to the description of some basic fabrication steps, and to measuring methods for the semiconductor-device parameters. Books > Science & Nature > Science > Technology > Superconductors List_Books<
Paperback, [PU: Springer-Verlag New York Inc.], This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the func… Mehr…
Paperback, [PU: Springer-Verlag New York Inc.], This book describes the basic physics of semiconductors, including the hierarchy of transport models, and connects the theory with the functioning of actual semiconductor devices., Semi-conductors & Super-conductors<
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Detailangaben zum Buch - Physics Of Semiconductor Devices
EAN (ISBN-13): 9781493946990 ISBN (ISBN-10): 1493946994 Taschenbuch Erscheinungsjahr: 2016 Herausgeber: Springer-Verlag New York Inc.
Buch in der Datenbank seit 2016-11-25T04:20:55+01:00 (Berlin) Detailseite zuletzt geändert am 2023-11-06T18:44:21+01:00 (Berlin) ISBN/EAN: 1493946994
ISBN - alternative Schreibweisen: 1-4939-4699-4, 978-1-4939-4699-0 Alternative Schreibweisen und verwandte Suchbegriffe: Autor des Buches: boltzmann, rudan, massimo Titel des Buches: physics semiconductor devices, rudan
Daten vom Verlag:
Autor/in: Massimo Rudan Titel: Physics of Semiconductor Devices Verlag: Springer; Springer US 649 Seiten Erscheinungsjahr: 2016-09-10 New York; NY; US Gedruckt / Hergestellt in Niederlande. Sprache: Englisch 79,98 € (DE) 82,23 € (AT) 88,50 CHF (CH) POD XXIII, 649 p. 158 illus.
BC; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Schaltkreise und Komponenten (Bauteile); Verstehen; Physics of Semiconductor Devices; Semiconductor Devices; Semiconductor Physics; Semiconductor Technology; Semiconductor-device Architectures; Solid-State Physics and Semiconductor Devices; Electronic Circuits and Systems; Semiconductors; Electronics and Microelectronics, Instrumentation; Elektronische Geräte und Materialien; Elektronik; BB
.- Thermal Diffusion.- Thermal Oxidation— Layer Deposition.- Measuring the Semiconductor Parameters. Provides comprehensive guide for practitioners and beginners, describing the physics of semiconductors from fundamentals to applications Proceeds from first principles to description of actual devices’ behavior Includes mathematical derivations and explicit calculations, without being wordy Includes supplementary material: sn.pub/extras
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