ISBN: 9789812568625

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing … Mehr…

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. Bücher > Fremdsprachige Bücher > Englische Bücher 229 x 162 x 32 mm , World Scientific Publishing Company, Narain Arora, World Scientific Publishing Company, Aro<

2007, ISBN: 9789812568625

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing … Mehr…

A reprint of the classic text, this book popularized compact modeling of electronic and semiconductor devices and components for college and graduate-school classrooms, and manufacturing engineering, over a decade ago. The first comprehensive book on MOS transistor compact modeling, it was the most cited among similar books in the area and remains the most frequently cited today. The coverage is device-physics based and continues to be relevant to the latest advances in MOS transistor modeling. This is also the only book that discusses in detail how to measure device model parameters required for circuit simulations. The book deals with the MOS Field Effect Transistor (MOSFET) models that are derived from basic semiconductor theory. Various models are developed, ranging from simple to more sophisticated models that take into account new physical effects observed in submicron transistors used in today's (1993) MOS VLSI technology. Buch (fremdspr.) Narain Arora gebundene Ausgabe, World Scientific Publishing Company, 14.02.2007, World Scientific Publishing Company, 2007<

ISBN: 9789812568625

Hardback, [PU: World Scientific Publishing Co Pte Ltd], Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to meas… Mehr…

Hardback, [PU: World Scientific Publishing Co Pte Ltd], Deals with the MOS Field Effect Transistor models that are derived from basic semiconductor theory. This book discusses how to measure device model parameters required for circuit simulations. It emphasizes the assumptions used to arrive at the models, so that the accuracy of the models in describing the device characteristics are understood., Electronic Devices & Materials<

ISBN: 981256862X

Fnac.com : Mosfet Modeling for VLSI Simulation, International Series on Advances in Solid State Electronics and Technology - Livre. Découvrez des nouveautés, des coups de cœur, des avis … Mehr…

Fnac.com : Mosfet Modeling for VLSI Simulation, International Series on Advances in Solid State Electronics and Technology - Livre. Découvrez des nouveautés, des coups de cœur, des avis d'internautes, … Livre - Livre, World Scientific Pub Co Inc<