Simulation of Semiconductor Processes and Devices 2007 SISPAD 2007 - gebunden oder broschiert

EAN (ISBN-13): 9783211728604
ISBN (ISBN-10): 3211728600
Gebundene Ausgabe
Taschenbuch
Erscheinungsjahr: 2007
Herausgeber: Springer

Buch in der Datenbank seit 2007-10-17T19:25:12+02:00 (Berlin)
Detailseite zuletzt geändert am 2023-08-28T20:48:48+02:00 (Berlin)
ISBN/EAN: 9783211728604

ISBN - alternative Schreibweisen:
3-211-72860-0, 978-3-211-72860-4
Alternative Schreibweisen und verwandte Suchbegriffe:
Autor des Buches: grasser, selberherr, selber, tibor, grässe, siegfried, grass, sana
Titel des Buches: simulation, semiconductor devices

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Daten vom Verlag:

Autor/in: Tibor Grasser; Siegfried Selberherr
Titel: Simulation of Semiconductor Processes and Devices 2007 - SISPAD 2007
Verlag: Springer; Springer Wien
463 Seiten
Erscheinungsjahr: 2007-09-18
Vienna
Sprache: Englisch
160,49 € (DE)
164,99 € (AT)
177,00 CHF (CH)
Available
XV, 463 p. With CD-ROM.

SF; BB; DB; Hardcover, Softcover / Technik/Elektronik, Elektrotechnik, Nachrichtentechnik; Elektronik; Verstehen; Performance; VLSI; algorithm; algorithms; modeling; numerical methods; optoelectronics; simulation; verification; visualization; Electronics and Microelectronics, Instrumentation; Optical Materials; Nanotechnology; Computational Intelligence; Computer Modelling; Technische Anwendung von elektronischen, magnetischen, optischen Materialien; Nanotechnologie; Künstliche Intelligenz; Computermodellierung und -simulation; EA; BC

Nanomanufacturing Technology and Opportunities Through Physically-Based Simulation.- Atomistic Modeling of Defect Diffusion in SiGe.- Diffusion and Deactivation of As in Si: Combining Atomistic and Continuum Simulation Approaches.- Molecular Dynamics Modeling of Octadecaborane Implantation into Si.- High Performance, Strained-Ge, Heterostructure p-MOSFETs.- Strain Induced Drain-Current Enhancement Mechanism in Short-Channel Bulk Ge-pMOSFETs with Different Channel and Surface Orientations.- Validation of the Effect of Full Stress Tensor in Hole Transport in Strained 65nm-Node pMOSFETs.- Modeling and Characterization of Advanced Phosphorus Ultra Shallow Junction Using Germanium and Carbon Coimplants.- Intrinsic Stress Build-Up During Volmer-Weber Crystal Growth.- Strain Energy Driven and Curvature Driven Grain Boundary Migration in 3D-IC Cu Vias.- Modeling of Re-Sputtering Induced Bridge of Tungsten Bit-Lines for NAND Flash Memory Cell with 37nm Node Technology.- Efficient Mask Design for Inverse Lithography Technology Based on 2D Discrete Cosine Transformation (DCT).- Modeling of Deep Reactive Ion Etching in a Three-Dimensional Simulation Environment.- Comparison of Monte Carlo Transport Models for Nanometer-Size MOSFETs.- Surface Roughness Scattering in Ultrathin-Body SOI MOSFETs.- Pearson Effective Potential vs. Multi-Subband Monte-Carlo Simulation for Electron Transport in DG nMOSFETs.- Inclusion of the Pauli Principle in the Langevin-Boltzmann Equation for Bulk Systems.- Energy Conservation in Collisional Broadening.- A Simple Technique for the Monte Carlo Simulation of Transport in Quantum Wells.- Upcoming Challenges for Process Modeling.- Physics-Based Simulation of 1/f Noise in MOSFETs under Large-Signal Operation.- Thin Body Effects to Suppress Random Dopant Fluctuations in Nano-Scaled MOSFETs.- ‘Atomistic’ Mesh Generation for the Simulation of Semiconductor Devices.- Line Edge and Gate Interface Roughness Simulations of Advanced VLSI SOI-MOSFETs.- Impact of Shear Strain and Quantum Confinement on Channel nMOSFET with High-Stress CESL.- Analysis of Novel Stress Enhancement Effect Based on Damascene Gate Process with eSiGe S/D for pFETs.- Nonlinear Piezoresistance Effect in Devices with Stressed Etch Stop Liner.- 3D Stress, Process and Device Simulation: Extraction of the Relevant Stress Tensor.- Impact of Two-Step Recessed SiGe S/D Engineering for Advanced pMOSFETs of 32 nm Technology Node and Beyond.- Simulation Study of Multiple FIN FinFET Design for 32nm Technology Node and Beyond.- Device Design and Scalability of an Impact Ionization MOS Transistor with an Elevated Impact Ionization Region.- A Prototype Wafer Processing TCAD Tool Composed of BMD Simulation Module, Metal Gettering and Thermal Stress/Slip Functions for Scaled Device Design Phase.- Compact Modeling of Phase-Change Memories.- Modeling of NBTI Degradation for SiON pMOSFET.- Modeling Study of Ultra-Thin Ge Layers Using Tight-Binding, LCBB and kp Methods.- Analysis of Silicon Dioxide Interface Transition Region in MOS Structures.- Tunneling Properties of MOS Systems Based on High-k Oxides.- First-Principles Investigation on Oxide Trapping.- A Self-Consistent Simulation of InSb Double-Gate MOSFETs Using Full-Band Tight-Binding Approach.- Influence of Oxygen Composition and Carbon Impurity on Electronic Reliability of HfO2.- Upcoming Physics Challenges for Device Modeling.- Transient Characterization of Interface Traps in 4H-SiC MOSFETs.- Electro-Thermal, Transient, Mixed-Mode 2D Simulation Study of SiC Power Thyristors Operating Under Pulsed-PowerConditions.- Numerical Design Study on the Optimal p-Emitter Thickness of 4H-SiC Bipolar Diodes.- Study of Time-Periodic Avalanche Breakdown Occurring in VLD Edge Termination Structures.- Simulation of Magnetotransport in Hole Inversion Layers Based on Full Subbands.- Monte Carlo Study on Number of Scattering Events for Quasi-Ballistic Transport in MOSFETs.- Modeling of Macroscopic Transport Parameters in Inversion Layers.- Study of the Junction Depth Effect on Ballistic Current Using the Subband Decomposition Method.- Transport in Silicon Nanowire and Single-Electron Transistors.- Self-Consistent Simulations of Nanowire Transistors Using Atomistic Basis Sets.- Full-Band Atomistic Study of Source-To-Drain Tunneling in Si Nanowire Transistors.- Modeling Carbon Nanotube Electron-Phonon Resonances Shows Terahertz Current Oscillations.- Crystalline Orientation Effects on Ballistic Hole Current in Ultrathin DG SOI MOSFETs.- Numerical Simulation of Field Emission in the Surface Conduction Electron-Emitter Display.- Microscopic Modelling of Quantum Well Solar Cells.- Monte Carlo Simulation of Time-Dependent Operation of Quantum Cascade Lasers.- Multiscale Simulation of Electronic and Optoelectronic Devices with TiberCAD.- Hopping Transport of Electrons via Si-Dot.- Simulation of Spin Transport Properties in Schottky Barrier FET Using Monte Carlo Method.- Discontinuous Galerkin Solver for the Semiconductor Boltzmann Equation.- Modeling of Shock Waves in Two-Dimensional Electron Channels: Effect of Tsunami.- Simulation of Lag and Current Slump in AlGaN/GaN HEMTs as Affected by Buffer Trapping.- Electrothermal Monte Carlo Study of Charge Confinement in GaN HFETs.- Hydrodynamic Modeling of AlGaN/GaN HEMTs.- Simulation of AlGaN/GaN HEMTs’ Breakdown Voltage Enhancement UsingGrating Field Plates.- Modelling of Hot Electron Effects in GaN/AlGaN HEMT with AlN Interlayer.- Compact Modeling for New Transistor Structures.- Compact Double-Gate MOSFET Model Correctly Predicting Volume-Inversion Effects.- Modeling NAND Flash Memories for Circuit Simulations.- Surface-Potential-Based Compact Model for Quantum Effects in Planar and Double-Gate MOSFET.- Statistical Compact Model Parameter Extraction Strategy for Intrinsic Parameter Fluctuation.- Calibrated Hydrodynamic Simulation of Deeply-Scaled Well-Tempered Nanowire Field Effect Transistors.- The Effect of Optical Phonon Scattering on the On-Current and Gate Delay Time of CNT-FETs.- Monte Carlo Modeling of Schottky Contacts on Semiconducting Carbon Nanotubes.- Box Method for the Convection-Diffusion Equation Based on Exponential Shape Functions.- A Simplified Quantum Mechanical Model for the Electron Distribution in a Si Nanowire.- Efficient Green’s Function Algorithms for Atomistic Modeling of Si Nanowire FETs.- Influence of Uniaxial [110] Stress on the Silicon Conduction Band Structure: Stress Dependence of the Nonparabolicity Parameter.- Maxwell Equations on Unstructured Grids Using Finite-Integration Methods.- Adaptive Time Discretization for a Transient Quantum Drift-Diffusion Model.- MDS — A New, Highly Extensible Device Simulator.- Influence of the Poole-Frenkel Effect on Programming and Erasing in Charge Trapping Memories.- On the Magnetic Field Extraction for On-Chip Inductance Calculation.- EMC Simulation of THz Emission from Semiconductor Devices.- Enhanced Band-to-Band Tunneling-Induced-Hot-Electron Injection in P-Channel Flash by SiGe Channel and HfO2 Tunnel Dielectric.- Challenges in 3D Process Simulation for Advanced Technology Understanding.- Characteristic FluctuationDependence on Discrete Dopant for 16nm SOI FinFETs at Different Temperature.- Hot-Carrier Behaviour of a 0.35 µm High-Voltage n-Channel LDMOS Transistor.- Dynamic Monte Carlo Simulation of an Amorphous Organic Device.- Charge Injection Model in Organic Light-Emitting Diodes Based on a Master Equation.- Simulation of Analog/RF Performance and Process Variation in Nanowire Transistors.- Analysis of Process-Geometry Modulations through 3D TCAD.- Asymmetrical Triple-Gate FET.- Process Variation-A ware Estimation of Static Leakage Power in Nano CMOS.- The Optimization of Low Power Operation SRAM Circuit for 32nm Node.- Device Design Evaluation of Multigate FETs Using Full 3D Process and Device TCAD Simulation.- Modeling and Extraction of Effective Lateral Doping Profile Using the Relation of On-Resistance vs. Overlap Capacitance in (100) and (110)-Oriented MOSFETs.- Molecular Orbital Examination of Negative-Bias Temperature Instability Mechanism.- Process Margin Analysis and Yield Enhancement Through Statistical Topography Simulation.- Efficient Coupling of Monte Carlo and Level Set Methods for Topography Simulation.- Strained Contact Etch Stop Layer Integration: Geometry Design Impact.- Modeling of Deposition During C5F8/CO/O2/Ar Plasma Etching Using Topography and Composition Simulation.- Ab Initio Calculations of the Transport Through Single Molecules and Carbon Nanotubes.- Three-Dimensional Sacrificial Etching.- Atomistic study of Metal/High-K interface.- Ab-Initio Calculations of Indium Migration in Uniaxial Strained Silicon.- Noise Simulation of Nanoscale Devices Based on the Non-Equilibrium Green’s Function Formalism.- RDF Analysis of Small-Signal Equivalent Circuit Parameters in MOSFET Devices.